Crystal growth to 3- / 4 basic lead sulphate crystals and oxidation of grid surface.

CONCURE: Rapid Crystal Growth at T~95°C to 3 basic lead sulphate for negative plates and 4 basic lead sulphate for positive plates by add of TBLS+ and enhaunced oxidation of grid surface

• 3 basic lead sulphate crystals

• small sized 4 basic lead sulphate crystals by add of TBLS+
• big sized 4 basic lead sulphate crystals without add of TBLS+

Forced stream of air through the plate stacks (controlled diffusion)

CONCURE: Two zone drying oven: 1^st zone drying at 60 - 80°C for 1 hour and 2^nd zone drying at 90 - 100°C for 1 hour for plates for SLI batteries

• Plates in stacks for SLI batteries: 3 hours by add of TBLS+
• Plates in stacks for Industrial batteries: 3 - 6 hours

Remark: Based on Arrenius law at about 90°C and use of steam the growth of crystals to 3 basic and 4 basic lead sulphate, presumed add of TBLS+, is completed within 1 hour. This is shown in the picture on the left hand side for curing to 4 basic lead sulphate by use of TBLS+. Within the next 2 hours of drying no remarkable growth will be established. A final moisture of less than 0.5% as well as a low free lead content will be obtained during the period of fast drying of the plates in stacks.